onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC634P FDC634P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015914-FDC634P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 779pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015914-FDC634P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 779pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC634P - 015914-FDC634P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC634P
015914-FDC634P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC634P 015914-FDC634P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015914-FDC634P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 779pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015914-FDC634P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 779pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDC634PCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC634PCT-ND
Single FETs, MOSFETs FDC634PCT-ND
P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC634PDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC634PDKR-ND
Single FETs, MOSFETs FDC634PDKR-ND
P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC634PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC634PTR-ND
Single FETs, MOSFETs FDC634PTR-ND
P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC634P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC634P
Single FETs, MOSFETs FDC634P
MOSFET P-CH 20V 3.5A SUPERSOT6

MOSFET P-CH 20V 3.5A SUPERSOT6

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDC634P
MOSFET FDC634P
MOSFET SSOT-6 P-CH -20V

MOSFET SSOT-6 P-CH -20V

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDC634P
Triode/MOS Tube/Transistor >> MOSFETs FDC634P
20V 3.5A 1.6W 80mΩ@3.5A,4.5V 1.5V@250uA P Channel TSOT-23-6 MOSFETs ROHS

20V 3.5A 1.6W 80mΩ@3.5A,4.5V 1.5V@250uA P Channel TSOT-23-6 MOSFETs ROHS

Supplier's Site Datasheet
P Channel Mosfet, -20V, 3.5A Super Sot-6; Channel Type Onsemi - 58K8824 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 3.5A Super Sot-6; Channel Type Onsemi
58K8824
P Channel Mosfet, -20V, 3.5A Super Sot-6; Channel Type Onsemi 58K8824
P CHANNEL MOSFET, -20V, 3.5A SUPER SOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 3.5A SUPER SOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC634P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC634P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC634P
MOSFET P-CH 20V 3.5A SUPERSOT6

MOSFET P-CH 20V 3.5A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015914-FDC634P FDC634PCT-ND FDC634P FDC634P FDC634P 58K8824 FDC634P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC634P Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs P Channel Mosfet, -20V, 3.5A Super Sot-6; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
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