onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N FDC633N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001148-FDC633N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 538pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 42 mOhm @ 5.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N - 001148-FDC633N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDC633N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDC633NTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC633N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001148-FDC633N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 538pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 42 mOhm @ 5.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N - 001148-FDC633N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N
001148-FDC633N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N 001148-FDC633N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001148-FDC633N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 538pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 42 mOhm @ 5.2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001148-FDC633N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 538pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 42 mOhm @ 5.2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FDC633N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC633N
Single FETs, MOSFETs FDC633N
MOSFET N-CH 30V 5.2A SUPERSOT6

MOSFET N-CH 30V 5.2A SUPERSOT6

Supplier's Site Datasheet
Single FETs, MOSFETs - FDC633NTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC633NTR-ND
Single FETs, MOSFETs FDC633NTR-ND
N-Channel 30V 5.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 30V 5.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC633N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC633N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC633N
MOSFET N-CH 30V 5.2A SUPERSOT6

MOSFET N-CH 30V 5.2A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 001148-FDC633N FDC633N FDC633NTR-ND FDC633N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC633N Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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