Small Signal Field-Effect Transistor, 0.22A, 25V, 2-Element, N-Channel and P-Channel, MOSFET
Mosfet Array N and P-Channel 25V 220mA, 460mA 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066918-FDC6322C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA, 460mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 25V 0.22A SSOT6
| Rochester Electronics | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDC6322C | FDC6322C-ND | 066918-FDC6322C | FDC6322C |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6322C | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; P-Channel | P-Channel | ||
| Package Type | CPH6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SuperSOT-6 | |
| V(BR)DSS | 25 volts |
