DUAL N & P CHANNEL DIGITAL FET 2
Mosfet Array N and P-Channel 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6
Mosfet Array N and P-Channel 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6
Mosfet Array N and P-Channel 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001139-FDC6321C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDC6321C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 680mA, 460mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.3nC @ 5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): FDC6321C_Q; FDC6321C_NF40;
Introduction Date: April 22, 1999
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
MOSFET N/P-Ch 25V 0.68A/0.46A SuperSOT6
MOSFET N/P-Ch 25V 0.68A/0.46A SuperSOT6
MOSFET N/P-Ch 25V 0.68A/0.46A SuperSOT6
MOSFET Transistor, N and P Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV RoHS Compliant: Yes
DUAL N/P CHANNEL MOSFET, 25V SUPER SOT-6; Transistor Polarity:Complementa
MOSFET, FULL REEL; Transistor Polarity:Complementa
MOSFET N/P-CH 25V 0.68A SSOT6
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDC6321C | FDC6321CDKR-ND | 001139-FDC6321C | 3544985 | 3544985P | FDC6321C | 25M9441 | 58K1419 | 67R2033 | FDC6321C |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6321C | MOSFETs | MOSFETs | MOSFET | Mosfet Transistor, N And P Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi | Dual N/p Channel Mosfet, 25V Super Sot-6; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | P-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 25 volts | 25 volts | ||||||||
| IDSS | 680 milliamps | 460 milliamps | 680 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
