MOSFET 2P-CH 12V 2.5A SSOT-6
Mosfet Array 2 P-Channel (Dual) 12V 2.5A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 12V 2.5A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 12V 2.5A 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038022-FDC6318P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 8nC @ 4.5V
Max Input Capacitance: 455pF @ 6V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFETs SuperSOT-3 Product overview: FDC6318P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC6318P can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 12V 2.5A SSOT6
MOSFET Transistor, Dual P Channel, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC6318P | FDC6318PDKR-ND | 1038022-FDC6318P | 2088-FDC6318P | FDC6318P | 47T5017 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6318P | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, Dual P Channel, 2.5 A, -12 V, 90 Mohm, -4.5 V, 700 Mv Rohs Compliant Onsemi |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 12 volts | 12 volts | ||||
| IDSS | 2500 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
