Mosfet Array 2 P-Channel (Dual) 20V 2.3A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 700mW Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001137-FDC6312P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6312P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 7nC @ 4.5V
Max Input Capacitance: 467pF @ 10V
Maximum Rds On at Id,Vgs: 115 mOhm @ 2.3A, 4.5V
Alternative Parts (Cross-Reference): DMP2240UDM; TSM3911DCX6; TSM3911DCX6 RF;
Introduction Date: September 26, 2000
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET 2P-CH 20V 2.3A SSOT-6
MOSFET P-Channel 20V 2.3A SuperSOT6
MOSFET P-Channel 20V 2.3A SuperSOT6
MOSFET P-Channel 20V 2.3A SuperSOT6
MOSFET 2P-CH 20V 2.3A SSOT6
DUAL P MOSFET -20V 2.3A SUPER SOT-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.3A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.3A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC6312PDKR-ND | 001137-FDC6312P | FDC6312P | 6710340 | 6710340P | FDC6312P | 58K8820 | FDC6312P |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6312P | FET, MOSFET Arrays | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual P Mosfet -20V 2.3A Super Sot-6; Transistor Polarity Onsemi | MOSFET |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23 | SOT23; SOT-23 | TO-3 | ||
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| PD | 700 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
