Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001136-FDC6310P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.2nC @ 4.5V
Max Input Capacitance: 337pF @ 10V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.2A, 4.5V
Alternative Parts (Cross-Reference): IRF5850TRPBF; FDC6310P_Q; FDC6310P_NL; FDC6310P;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2P-CH 20V 2.2A SSOT6
Mosfet Array 2 P-Channel (Dual) 20V 2.2A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 2.2A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 2.2A 700mW Surface Mount SuperSOT™-6
MOSFET Dual P-Ch 2.5V Spec Power Trench
MOSFET 2P-CH 20V 2.2A SSOT6
MOSFET, 2 P-CH, -20V, -2.2A, SOT-23-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
DUAL P CHANNEL MOSFET, -20V, SUPER SOT-6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001136-FDC6310P | FDC6310P | FDC6310PFSTR-ND | FDC6310P | FDC6310P | 31Y1345 | 58K1418 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6310P | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, 2 P-Ch, -20V, -2.2A, Sot-23-6; Transistor Polarity Onsemi | Dual P Channel Mosfet, -20V, Super Sot-6, Full Reel; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 700 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3; SOT23 | TO-3 |
