Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001132-FDC6303N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6303N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 680mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.3nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): FDC6303N-Q; FDC6303N_NL;
Introduction Date: September 22, 1997
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6
MOSFET 2N-CH 25V 0.68A SSOT6
MOSFET Dual N-Ch 25V 0.68A SuperSOT6
MOSFET Dual N-Ch 25V 0.68A SuperSOT6
MOSFET Dual N-Ch 25V 0.68A SuperSOT6
TSOT-23-6 MOSFETs ROHS
DUAL N MOSFET 25V 680mA SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET 2N-CH 25V 0.68A SSOT6
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 001132-FDC6303N | FDC6303NDKR-ND | FDC6303N | 3544941 | 3544941P | FDC6303N | FDC6303N | 58K8819 | 58M6619 | FDC6303N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFETs | MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Dual N Mosfet 25V 680Ma Super Sot-6; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||||
| V(BR)DSS | 25 volts | 25 volts | ||||||||
| PD | 700 milliwatts | |||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; Sot-23 | SOT23; SOT-23 | SOT23 | TO-3 | TO-3 |
