onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N FDC6303N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001132-FDC6303N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDC6303N Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 680mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.3nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V Alternative Parts (Cross-Reference): FDC6303N-Q; FDC6303N_NL; Introduction Date: September 22, 1997 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001132-FDC6303N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDC6303N Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 680mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.3nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V Alternative Parts (Cross-Reference): FDC6303N-Q; FDC6303N_NL; Introduction Date: September 22, 1997 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N - 001132-FDC6303N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N
001132-FDC6303N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N 001132-FDC6303N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001132-FDC6303N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDC6303N Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 680mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.3nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V Alternative Parts (Cross-Reference): FDC6303N-Q; FDC6303N_NL; Introduction Date: September 22, 1997 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001132-FDC6303N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6303N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 680mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.3nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): FDC6303N-Q; FDC6303N_NL;
Introduction Date: September 22, 1997
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDC6303NDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6303NDKR-ND
FET, MOSFET Arrays FDC6303NDKR-ND
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
FET, MOSFET Arrays - FDC6303NCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6303NCT-ND
FET, MOSFET Arrays FDC6303NCT-ND
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
FET, MOSFET Arrays - FDC6303NTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6303NTR-ND
FET, MOSFET Arrays FDC6303NTR-ND
Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
FET, MOSFET Arrays - FDC6303N - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDC6303N
FET, MOSFET Arrays FDC6303N
MOSFET 2N-CH 25V 0.68A SSOT6

MOSFET 2N-CH 25V 0.68A SSOT6

Supplier's Site Datasheet
MOSFETs - 3544941 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
3544941
MOSFETs 3544941
MOSFET Dual N-Ch 25V 0.68A SuperSOT6

MOSFET Dual N-Ch 25V 0.68A SuperSOT6

Supplier's Site
MOSFETs - 3544941P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
3544941P
MOSFETs 3544941P
MOSFET Dual N-Ch 25V 0.68A SuperSOT6

MOSFET Dual N-Ch 25V 0.68A SuperSOT6

Supplier's Site
MOSFETs - 1662740 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1662740
MOSFETs 1662740
MOSFET Dual N-Ch 25V 0.68A SuperSOT6

MOSFET Dual N-Ch 25V 0.68A SuperSOT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDC6303N
MOSFET FDC6303N
MOSFET SSOT-6 N-CH 25V

MOSFET SSOT-6 N-CH 25V

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDC6303N
Triode/MOS Tube/Transistor >> MOSFETs FDC6303N
TSOT-23-6 MOSFETs ROHS

TSOT-23-6 MOSFETs ROHS

Supplier's Site Datasheet
Dual N Mosfet 25V 680Ma Super Sot-6; Transistor Polarity Onsemi - 58K8819 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Mosfet 25V 680Ma Super Sot-6; Transistor Polarity Onsemi
58K8819
Dual N Mosfet 25V 680Ma Super Sot-6; Transistor Polarity Onsemi 58K8819
DUAL N MOSFET 25V 680mA SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

DUAL N MOSFET 25V 680mA SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

Supplier's Site
Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi - 58M6619 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi
58M6619
Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi 58M6619
Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Transistor Polarity Onsemi - 67R2028 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Transistor Polarity Onsemi
67R2028
Mosfet, Full Reel; Transistor Polarity Onsemi 67R2028
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:680mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC6303N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC6303N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC6303N
MOSFET 2N-CH 25V 0.68A SSOT6

MOSFET 2N-CH 25V 0.68A SSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001132-FDC6303N FDC6303NDKR-ND FDC6303N 3544941 3544941P FDC6303N FDC6303N 58K8819 58M6619 FDC6303N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6303N FET, MOSFET Arrays FET, MOSFET Arrays MOSFETs MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Dual N Mosfet 25V 680Ma Super Sot-6; Transistor Polarity Onsemi Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; Sot-23 SOT23; SOT-23 SOT23 TO-3 TO-3
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