Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066917-FDC6302P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 120mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.31nC @ 4.5V
Max Input Capacitance: 11pF @ 10V
Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Small Signal Field-Effect Transistor, 0.12A, 25V, 2-Element, P-Channel, MOSFET
Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6
DUAL P MOSFET -25V -120mA SUPERSOT6; Transistor Polarity:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:120mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 25V 0.120A SSOT6
| Win Source Electronics | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 066917-FDC6302P | FDC6302P | FDC6302PTR-ND | FDC6302P | 58K1415 | FDC6302P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P | FET, MOSFET Arrays | MOSFET | Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | ||||
| V(BR)DSS | 25 volts | |||||
| PD | 700 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
