onsemi FET, MOSFET Arrays FDC6302P

Description
Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6
  • FET, MOSFET Arrays - FDC6302PTR-ND - DigiKey
    DigiKey
  • FDC6302P - Rochester Electronics
    Rochester Electronics
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P - 066917-FDC6302P - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC6302P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi - 58K1415 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDC6302PTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDC6302PTR-ND
FET, MOSFET Arrays FDC6302PTR-ND
Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
- FDC6302P - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDC6302P
FDC6302P
Small Signal Field-Effect Transistor, 0.12A, 25V, 2-Element, P-Channel, MOSFET

Small Signal Field-Effect Transistor, 0.12A, 25V, 2-Element, P-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P - 066917-FDC6302P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P
066917-FDC6302P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P 066917-FDC6302P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066917-FDC6302P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 120mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.31nC @ 4.5V Max Input Capacitance: 11pF @ 10V Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066917-FDC6302P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 120mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.31nC @ 4.5V
Max Input Capacitance: 11pF @ 10V
Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDC6302P
MOSFET FDC6302P
MOSFET SSOT-6 P-CH -25V

MOSFET SSOT-6 P-CH -25V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC6302P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC6302P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC6302P
MOSFET 2P-CH 25V 0.120A SSOT6

MOSFET 2P-CH 25V 0.120A SSOT6

Supplier's Site
Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi - 58K1415 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi
58K1415
Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi 58K1415
DUAL P MOSFET -25V -120mA SUPERSOT6; Transistor Polarity:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:120mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL P MOSFET -25V -120mA SUPERSOT6; Transistor Polarity:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:120mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDC6302PTR-ND FDC6302P 066917-FDC6302P FDC6302P FDC6302P 58K1415
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6302P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual P Mosfet -25V -120Ma Supersot6; Transistor Polarity Onsemi
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 CPH6 SOT3; SuperSOT-6 TO-3
Polarity P-Channel P-Channel
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
V(BR)DSS 25 volts
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