onsemi Single FETs, MOSFETs FDC365P

Description
MOSFET P-CH 35V 4.3A SUPERSOT6
  • Single FETs, MOSFETs - FDC365P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDC365PTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC365P - 001120-FDC365P - Win Source Electronics
    Win Source Electronics
  • Mosfet, P Channel, -35V, 0.045Ohm, -4.3A, Supersot-6; Channel Type Onsemi - 84W8848 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC365P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET P-CH 35V 4.3A SUPERSOT6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDC365P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC365P
Single FETs, MOSFETs FDC365P
MOSFET P-CH 35V 4.3A SUPERSOT6

MOSFET P-CH 35V 4.3A SUPERSOT6

Supplier's Site Datasheet
Single FETs, MOSFETs - FDC365PTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC365PTR-ND
Single FETs, MOSFETs FDC365PTR-ND
P-Channel 35V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 35V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC365P - 001120-FDC365P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC365P
001120-FDC365P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC365P 001120-FDC365P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001120-FDC365P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-SSOT Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 35V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 705pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.2A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001120-FDC365P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-SSOT
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 705pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDC365P
MOSFET FDC365P
MOSFET -35V P-Channel PowerTrench

MOSFET -35V P-Channel PowerTrench

Buy Now Datasheet
Mosfet, P Channel, -35V, 0.045Ohm, -4.3A, Supersot-6; Channel Type Onsemi - 84W8848 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -35V, 0.045Ohm, -4.3A, Supersot-6; Channel Type Onsemi
84W8848
Mosfet, P Channel, -35V, 0.045Ohm, -4.3A, Supersot-6; Channel Type Onsemi 84W8848
MOSFET, P CHANNEL, -35V, 0.045OHM, -4.3A, SUPERSOT-6; Channel Type:P Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes

MOSFET, P CHANNEL, -35V, 0.045OHM, -4.3A, SUPERSOT-6; Channel Type:P Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC365P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC365P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC365P
MOSFET P-CH 35V 4.3A SUPERSOT6

MOSFET P-CH 35V 4.3A SUPERSOT6

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDC365P FDC365PTR-ND 001120-FDC365P FDC365P 84W8848 FDC365P
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC365P MOSFET Mosfet, P Channel, -35V, 0.045Ohm, -4.3A, Supersot-6; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 35 volts 35 volts
IDSS 4300 milliamps 4300 milliamps
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