MOSFET 2N-CH 100V 1A SSOT-6
Mosfet Array 2 N-Channel (Dual) 100V 1A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 100V 1A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 N-Channel (Dual) 100V 1A 700mW Surface Mount SuperSOT™-6
DUAL MOSFET, DUAL N CHANNEL, 1 A, 100 V, 500 MOHM, 10 V, 2.6 V. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001118-FDC3601N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC3601N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 153pF @ 50V
Maximum Rds On at Id,Vgs: 500 mOhm @ 1A, 10V
Introduction Date: March 31, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
Dual MOSFET, Dual N Channel, 1 A, 100 V, 500 mohm, 10 V, 2.6 V RoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; On Resistance Rds(on):0.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET 2N-CH 100V 1A SSOT6
MOSFET Dual N-Ch 100V Spec Power Trench
| ODG (Origin Data Global) | DigiKey | Radwell International | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC3601N | FDC3601NTR-ND | 16119766 | 001118-FDC3601N | 1868997 | 1868997P | 61M6199 | 63R1456 | FDC3601N | FDC3601N |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3601N | MOSFETs | MOSFETs | Dual Mosfet, Dual N Channel, 1 A, 100 V, 500 Mohm, 10 V, 2.6 V Rohs Compliant Onsemi | Mosfet Transistor, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| IDSS | 1000 milliamps | 1000 milliamps | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
