onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3535 FDC3535

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001117-FDC3535 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC3535 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 880pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 183 mOhm @ 2.1A, 10V Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001117-FDC3535 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC3535 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 880pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 183 mOhm @ 2.1A, 10V Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3535 - 001117-FDC3535 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3535
001117-FDC3535
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3535 001117-FDC3535
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001117-FDC3535 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC3535 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 880pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 183 mOhm @ 2.1A, 10V Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001117-FDC3535
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC3535
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 880pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 183 mOhm @ 2.1A, 10V
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
P-Channel -80V 2.1A SOT-23 MOSFET Transistor - 278-FDC3535 - ERSAELECTRONICS PTE. LTD.
Singapore
P-Channel -80V 2.1A SOT-23 MOSFET Transistor
278-FDC3535
P-Channel -80V 2.1A SOT-23 MOSFET Transistor 278-FDC3535
P-Channel JFET, -80V, 2.1A, 183mR, SOT-23-6 Product overview: FDC3535 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -80V, 2.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -80V, 2.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC3535 can be used for catalog matching and distributor lookup.

P-Channel JFET, -80V, 2.1A, 183mR, SOT-23-6 Product overview: FDC3535 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -80V, 2.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -80V, 2.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC3535 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDC3535TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC3535TR-ND
Single FETs, MOSFETs FDC3535TR-ND
P-Channel 80V 2.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 80V 2.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC3535 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC3535
Single FETs, MOSFETs FDC3535
P-CHANNEL POWER TRENCH MOSFET, -

P-CHANNEL POWER TRENCH MOSFET, -

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC3535 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC3535
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC3535
MOSFET P-CH 80V 2.1A SUPERSOT6

MOSFET P-CH 80V 2.1A SUPERSOT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDC3535
MOSFET FDC3535
MOSFET MOSFET; -80V P-Chan PowerTrench

MOSFET MOSFET; -80V P-Chan PowerTrench

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001117-FDC3535 278-FDC3535 FDC3535TR-ND FDC3535 FDC3535 FDC3535
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3535 P-Channel -80V 2.1A SOT-23 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 80 volts 80 volts
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data