MOSFET N-CH 200V 1.1A SUPERSOT6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001116-FDC2612
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC2612
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 234pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 725 mOhm @ 1.1A, 10V
Alternative Parts (Cross-Reference): FDC2612-F073; FDC2612-F095;
Introduction Date: August 13, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
N-Channel 200V 1.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 200V 1.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 200V 1.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFETs 200V NCh PowerTrench Product overview: FDC2612 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC2612 can be used for catalog matching and distributor lookup.
MOSFET, N CH, 200V, 1.1A, SOT-23-6; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 1.1A SUPERSOT6
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDC2612 | 001116-FDC2612 | FDC2612DKR-ND | 2088-FDC2612 | FDC2612 | 31Y1343 | FDC2612 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2612 | Single FETs, MOSFETs | 200V MOSFET Transistor | MOSFET | Mosfet, N Ch, 200V, 1.1A, Sot-23-6; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| IDSS | 1100 milliamps | 1100 milliamps | |||||
| PD | 1600 milliwatts | 1600 milliwatts | 1.6 milliwatts |
