N-Channel PowerTrench® MOSFET, 30V, 6.1A, 26 mΩ, 3000-REEL Product overview: FDC021N30 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC021N30 can be used for catalog matching and distributor lookup.
N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6
Manufacturer: ON Semiconductor
Win Source Part Number: 850672-FDC021N30
Series: PowerTrench®
Features: 30 V
Package: Reel - TR
Family Name: FDC021
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: FDC021N30DKR, FDC021N30CT, FDC021N30TR
MOSFET N-CH 30V 6.1A SUPERSOT6
MOSFET 30V/20V NChnl Power Trench MOSFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDC021N30 | FDC021N30TR-ND | 850672-FDC021N30 | FDC021N30 | FDC021N30 |
| Product Name | N-Channel 30V 6.1A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC021N30 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| TJ | -55 C (-67 F) |
