MOSFETs N-Channel Power Trench MOSFET Product overview: FDBL0260N100 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDBL0260N100 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 200A 8HPSOF
Win Source Part Number: 1229221-FDBL0260N100
Category: Discrete Semiconductor Products>Transistors
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Package / Case: 8-PowerSFN
Supplier Device Package: 8-HPSOF
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDBL0260N100TR,FDBL0
Base Product Number: FDBL0260
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 100V 200A (Tc) 3.5W (Ta), 250W (Tc) Surface Mount 8-HPSOF
N-Channel 100V 200A (Tc) 3.5W (Ta), 250W (Tc) Surface Mount 8-HPSOF
N-Channel 100V 200A (Tc) 3.5W (Ta), 250W (Tc) Surface Mount 8-HPSOF
MOSFET N-CH 100V 200A 8HPSOF
MOSFET, N-CH, 100V, 200A, MO-299A-8; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power RoHS Compliant: Yes
MOSFET N-Channel Power Trench MOSFET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDBL0260N100 | FDBL0260N100 | 1229221-FDBL0260N100 | FDBL0260N100TR-ND | FDBL0260N100 | 46AC0758 | FDBL0260N100 |
| Product Name | N-Channel MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 200A, Mo-299A-8; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.1700 kS | ||||||
| PD | 250 milliwatts | 3500 milliwatts | 3500 to 250000 milliwatts | ||||
| Package Type | Reel | 8-PowerSFN | SOT3 | 8-PowerSFN | 10V | TO-3 |
