Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001114-FDB8896
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 93A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 2525pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Ch MOSFET, 30V, 93A, 5.7mR, TO-263AB, SMT Product overview: FDB8896 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 93A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 93A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8896 can be used for catalog matching and distributor lookup.
N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 30V 19A/93A TO263AB
N CHANNEL MOSFET, 30V, 93A TO-263AB, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:80W RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 93A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001114-FDB8896 | 278-FDB8896 | FDB8896TR-ND | FDB8896 | FDB8896 | 60J0581 | 67P3456 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 | 30V 93A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi | N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||||
| PD | 80000 milliwatts | 80000 milliwatts | 80000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
