onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 FDB8896

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001114-FDB8896 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 93A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 2525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 - 001114-FDB8896 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDB8896TR-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi - 60J0581 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi - 67P3456 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8896 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001114-FDB8896 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 93A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 2525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 - 001114-FDB8896 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896
001114-FDB8896
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 001114-FDB8896
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001114-FDB8896 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 93A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 2525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001114-FDB8896
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 93A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 2525pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB8896TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8896TR-ND
Single FETs, MOSFETs FDB8896TR-ND
N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDB8896
MOSFET FDB8896
MOSFET 30V N-Channel PowerTrench

MOSFET 30V N-Channel PowerTrench

Buy Now Datasheet
N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi - 60J0581 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi
60J0581
N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi 60J0581
N CHANNEL MOSFET, 30V, 93A TO-263AB, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:80W RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 93A TO-263AB, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:80W RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi - 67P3456 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi
67P3456
N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi 67P3456
N CHANNEL MOSFET, 30V, 93A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 93A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:93A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8896 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8896
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8896
MOSFET N-CH 30V 19A/93A TO263AB

MOSFET N-CH 30V 19A/93A TO263AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001114-FDB8896 FDB8896TR-ND FDB8896 60J0581 67P3456 FDB8896
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8896 Single FETs, MOSFETs MOSFET N Channel Mosfet, 30V, 93A To-263Ab, Full Reel; Channel Type Onsemi N Channel Mosfet, 30V, 93A To-263Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 80000 milliwatts 80000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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