onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8878 FDB8878

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037995-FDB8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037995-FDB8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8878 - 1037995-FDB8878 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8878
1037995-FDB8878
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8878 1037995-FDB8878
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037995-FDB8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037995-FDB8878
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1235pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Singapore
30V 48A MOSFET Transistor
278-FDB8878
30V 48A MOSFET Transistor 278-FDB8878
MOSFET N-CH 30V 48A D2PAK Product overview: FDB8878 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8878 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 48A D2PAK Product overview: FDB8878 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8878 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB8878-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8878-ND
Single FETs, MOSFETs FDB8878-ND
N-Channel 30V 48A (Tc) 47.3W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 48A (Tc) 47.3W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8878 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8878
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8878
MOSFET N-CH 30V 48A TO263

MOSFET N-CH 30V 48A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1037995-FDB8878 278-FDB8878 FDB8878-ND FDB8878
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8878 30V 48A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 47300 milliwatts 47300 milliwatts
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