onsemi Single FETs, MOSFETs FDB8860

Description
N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB8860TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8860TR-ND
Single FETs, MOSFETs FDB8860TR-ND
N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - FDB8860 - 1173717-FDB8860 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDB8860
1173717-FDB8860
FETs - Single - FDB8860 1173717-FDB8860
Manufacturer: ON Semiconductor Win Source Part Number: 1173717-FDB8860 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 254W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 2.3mOhm at 80A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 214nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 12585pF at 15V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173717-FDB8860
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 254W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 2.3mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 214nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 12585pF at 15V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8860 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8860
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8860
MOSFET N-CH 30V 80A TO263AB

MOSFET N-CH 30V 80A TO263AB

Supplier's Site
Mosfet, N Channel, 30V, 0.0016Ohm, 31A, To-263Ab-3; Channel Type Onsemi - 85W3135 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 0.0016Ohm, 31A, To-263Ab-3; Channel Type Onsemi
85W3135
Mosfet, N Channel, 30V, 0.0016Ohm, 31A, To-263Ab-3; Channel Type Onsemi 85W3135
MOSFET, N CHANNEL, 30V, 0.0016OHM, 31A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:254W RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 0.0016OHM, 31A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:254W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDB8860TR-ND 1173717-FDB8860 FDB8860 85W3135
Product Name Single FETs, MOSFETs FETs - Single - FDB8860 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 30V, 0.0016Ohm, 31A, To-263Ab-3; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 12585 pF @ 15 V TO-3; TO-263
V(BR)DSS 30 volts
PD 254000 milliwatts 254000 milliwatts
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