Manufacturer: ON Semiconductor
Win Source Part Number: 1173717-FDB8860
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 254W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 2.3mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 214nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 12585pF at 15V
N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 30V 80A TO263AB
MOSFET, N CHANNEL, 30V, 0.0016OHM, 31A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:254W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1173717-FDB8860 | FDB8860TR-ND | FDB8860 | 85W3135 |
| Product Name | FETs - Single - FDB8860 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 30V, 0.0016Ohm, 31A, To-263Ab-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | |||
| PD | 254000 milliwatts | 254000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
