N-Ch MOSFET, 30V, 80A, 1.5mR, TO-263, Logic Level Product overview: FDB8832 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8832 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001110-FDB8832
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 34A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 265nC @ 10V
Max Input Capacitance: 11400pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 800
MOSFET N-CH 30V 34A/80A TO263AB
N-Channel 30V 34A (Ta), 80A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 30V N-CH Logic Level PowerTrench MOSFET
MOSFET N-CH 30V 34A/80A TO263AB
MOSFET Transistor, N Channel, 34 A, 30 V, 1.5 mohm, 20 V, 1.6 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 80A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDB8832 | 001110-FDB8832 | FDB8832 | FDB8832TR-ND | FDB8832 | FDB8832 | 61M6197 | 30M0736 |
| Product Name | 30V 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 34 A, 30 V, 1.5 Mohm, 20 V, 1.6 V Rohs Compliant Onsemi | N Channel Mosfet, 30V, 80A To-263Ab; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 30 volts | 30 volts |
