onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832_F085 FDB8832_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037992-FDB8832_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 34A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 265nC @ 10V Max Input Capacitance: 11400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037992-FDB8832_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 34A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 265nC @ 10V Max Input Capacitance: 11400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832_F085 - 1037992-FDB8832_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832_F085
1037992-FDB8832_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832_F085 1037992-FDB8832_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037992-FDB8832_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 34A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 265nC @ 10V Max Input Capacitance: 11400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.9 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037992-FDB8832_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 34A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 265nC @ 10V
Max Input Capacitance: 11400pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 34A MOSFET Transistor
285-FDB8832_F085
30V 34A MOSFET Transistor 285-FDB8832_F085
MOSFET N-CH 30V 34A D2PAK Product overview: FDB8832_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 34A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDB8832_F085 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 34A D2PAK Product overview: FDB8832_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 34A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDB8832_F085 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037992-FDB8832_F085 285-FDB8832_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8832_F085 30V 34A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 300000 milliwatts 300000 milliwatts
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