MOSFET N-CH 80V 110A D2PAK
N-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 944800-FDB86363-F085
Series: *
Categories: Memory
MOSFETs N-Channel Power Trench MOSFET Product overview: FDB86363-F085 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB86363-F085 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 110A D2PAK
MOSFET N-Channel Power Trench MOSFET
MOSFET, AEC-Q101, NCH, 110A, 80V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB86363-F085 | FDB86363-F085CT-ND | 944800-FDB86363-F085 | 2088-FDB86363-F085 | FDB86363-F085 | FDB86363-F085 | 07AH3893 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Memory - Unclassified Memory - FDB86363-F085 | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Nch, 110A, 80V, To-263; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 80 volts | ||||||
| IDSS | 110000 milliamps | 110000 milliamps | |||||
| PD | 300000 milliwatts | 300 milliwatts |
