Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037989-FDB86135
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 7295pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 100V 75A D2PAK
N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 100V 75A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1037989-FDB86135 | FDB86135 | FDB86135CT-ND | FDB86135 | FDB86135 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB86135 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 2400 to 227000 milliwatts | 2400 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
