onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8447L FDB8447L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001108-FDB8447L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 15A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2620pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): AOB4184; STB80NF04T4; FDB8447L; BUK768R1-40E,118; Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001108-FDB8447L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 15A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2620pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): AOB4184; STB80NF04T4; FDB8447L; BUK768R1-40E,118; Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8447L - 001108-FDB8447L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8447L
001108-FDB8447L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8447L 001108-FDB8447L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001108-FDB8447L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 15A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2620pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): AOB4184; STB80NF04T4; FDB8447L; BUK768R1-40E,118; Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001108-FDB8447L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 15A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 2620pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): AOB4184; STB80NF04T4; FDB8447L; BUK768R1-40E,118;
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB8447LCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8447LCT-ND
Single FETs, MOSFETs FDB8447LCT-ND
N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB8447LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8447LTR-ND
Single FETs, MOSFETs FDB8447LTR-ND
N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 15A (Ta), 50A (Tc) 3.1W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
N Channel Mosfet, 40V, 50A To-263Ab; Channel Type Onsemi - 67P3454 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 50A To-263Ab; Channel Type Onsemi
67P3454
N Channel Mosfet, 40V, 50A To-263Ab; Channel Type Onsemi 67P3454
N CHANNEL MOSFET, 40V, 50A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 50A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 40V, 50A To-263Ab, Full Reel; Channel Type Onsemi - 52M3148 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 50A To-263Ab, Full Reel; Channel Type Onsemi
52M3148
N Channel Mosfet, 40V, 50A To-263Ab, Full Reel; Channel Type Onsemi 52M3148
N CHANNEL MOSFET, 40V, 50A TO-263AB, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.1W RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 50A TO-263AB, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.1W RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDB8447L
MOSFET FDB8447L
MOSFET 40V N-Channel PowerTrench MOSFET

MOSFET 40V N-Channel PowerTrench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8447L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8447L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8447L
MOSFET N-CH 40V 15A/50A TO263AB

MOSFET N-CH 40V 15A/50A TO263AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001108-FDB8447L FDB8447LCT-ND 67P3454 52M3148 FDB8447L FDB8447L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8447L Single FETs, MOSFETs N Channel Mosfet, 40V, 50A To-263Ab; Channel Type Onsemi N Channel Mosfet, 40V, 50A To-263Ab, Full Reel; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 3100 to 60000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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