onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445 FDB8445

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001107-FDB8445 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 3805pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445 - 001107-FDB8445 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDB8445TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8445 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3; Channel Type Onsemi - 57P6739 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3, Full Reel; Channel Type Onsemi - 86K1329 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET N-CH 40V 70A D2PAK - 598-FDB8445 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001107-FDB8445 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 3805pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445 - 001107-FDB8445 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445
001107-FDB8445
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445 001107-FDB8445
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001107-FDB8445 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 3805pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001107-FDB8445
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 3805pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Automotive, Motor Drive & Control
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB8445TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8445TR-ND
Single FETs, MOSFETs FDB8445TR-ND
N-Channel 40V 70A (Tc) 92W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 70A (Tc) 92W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8445 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8445
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8445
MOSFET N-CH 40V 70A TO263AB

MOSFET N-CH 40V 70A TO263AB

Supplier's Site
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3; Channel Type Onsemi - 57P6739 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3; Channel Type Onsemi
57P6739
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3; Channel Type Onsemi 57P6739
MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:92W RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:92W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3, Full Reel; Channel Type Onsemi - 86K1329 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3, Full Reel; Channel Type Onsemi
86K1329
Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3, Full Reel; Channel Type Onsemi 86K1329
MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:92W RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:92W RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 40V 70A D2PAK - 598-FDB8445 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 40V 70A D2PAK
598-FDB8445
MOSFET N-CH 40V 70A D2PAK 598-FDB8445
MOSFET N-CH 40V 70A D2PAK

MOSFET N-CH 40V 70A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001107-FDB8445 FDB8445TR-ND FDB8445 57P6739 598-FDB8445
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8445 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 40V, 0.0068Ohm, 70A, To-263Ab-3; Channel Type Onsemi MOSFET N-CH 40V 70A D2PAK
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 92000 milliwatts 92000 milliwatts 92000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB 62 nC @ 10 V TO-3; TO-263
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