onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8443 FDB8443

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066913-FDB8443 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 188W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 9310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066913-FDB8443 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 188W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 9310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8443 - 066913-FDB8443 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8443
066913-FDB8443
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8443 066913-FDB8443
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066913-FDB8443 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 188W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 9310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Motor Drive & Control Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066913-FDB8443
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 188W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 25A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 9310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Automotive, Motor Drive & Control
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB8443TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8443TR-ND
Single FETs, MOSFETs FDB8443TR-ND
N-Channel 40V 25A (Ta), 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 25A (Ta), 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel 40V 182A MOSFET Transistor
278-FDB8443
N-Channel 40V 182A MOSFET Transistor 278-FDB8443
N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, 800-REEL Product overview: FDB8443 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 182A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 182A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8443 can be used for catalog matching and distributor lookup.

N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, 800-REEL Product overview: FDB8443 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 182A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 182A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8443 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDB8443
MOSFET FDB8443
MOSFET 40V N-Channel PowerTrench

MOSFET 40V N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8443 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8443
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8443
MOSFET N-CH 40V 25A/120A TO263AB

MOSFET N-CH 40V 25A/120A TO263AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066913-FDB8443 FDB8443TR-ND 278-FDB8443 FDB8443 FDB8443
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8443 Single FETs, MOSFETs N-Channel 40V 182A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 188000 milliwatts 188000 milliwatts
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