N-Channel 40V 28A (Ta), 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 40V 28A (Ta), 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET 40V 80A 2.5mR TO-263 SMD Product overview: FDB8441 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8441 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001105-FDB8441
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 28A (Ta), 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 280nC @ 10V
Max Input Capacitance: 15000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N CHANNEL MOSFET, 40V, 28A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.8V; Gate Source Threshold Voltage Max:20V RoHS Compliant: Yes
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R
MOSFET 40V N-Channel PowerTrench MOSFET
MOSFET N-CH 40V 28A/120A TO263AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDB8441TR-ND | 278-FDB8441 | 001105-FDB8441 | 76M7874 | 598-FDB8441 | FDB8441 | FDB8441 |
| Product Name | Single FETs, MOSFETs | N-Channel SMD 40V 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8441 | N Channel Mosfet, 40V, 28A To-263Ab; Channel Type Onsemi | Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| V(BR)DSS | 40 volts | 40 volts |
