onsemi FETs - Single - FDB8160 FDB8160

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173715-FDB8160 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 254W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 1.8mOhm at 80A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 243nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 11825pF at 15V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173715-FDB8160 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 254W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 1.8mOhm at 80A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 243nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 11825pF at 15V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FDB8160 - 1173715-FDB8160 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDB8160
1173715-FDB8160
FETs - Single - FDB8160 1173715-FDB8160
Manufacturer: ON Semiconductor Win Source Part Number: 1173715-FDB8160 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 254W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 1.8mOhm at 80A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 243nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 11825pF at 15V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173715-FDB8160
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 254W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 1.8mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 243nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 11825pF at 15V

Buy Now
Singapore
30V 80A MOSFET Transistor
278-FDB8160
30V 80A MOSFET Transistor 278-FDB8160
MOSFET N-CH 30V 80A D2PAK Product overview: FDB8160 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8160 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 80A D2PAK Product overview: FDB8160 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8160 can be used for catalog matching and distributor lookup.

Supplier's Site
 - FDB8160 - Rochester Electronics
Newburyport, MA, United States
MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8160 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8160
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8160
MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1173715-FDB8160 278-FDB8160 FDB8160 FDB8160
Product Name FETs - Single - FDB8160 30V 80A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 254000 milliwatts 254000 milliwatts
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