onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6690S FDB6690S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037980-FDB6690S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 42A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 1238pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037980-FDB6690S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 42A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 1238pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6690S - 1037980-FDB6690S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6690S
1037980-FDB6690S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6690S 1037980-FDB6690S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037980-FDB6690S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 42A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 1238pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037980-FDB6690S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 42A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 15nC @ 5V
Max Input Capacitance: 1238pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 42A MOSFET Transistor
278-FDB6690S
30V 42A MOSFET Transistor 278-FDB6690S
MOSFET N-CH 30V 42A TO263AB Product overview: FDB6690S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6690S can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 42A TO263AB Product overview: FDB6690S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6690S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB6690S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB6690S-ND
Single FETs, MOSFETs FDB6690S-ND
N-Channel 30V 42A (Ta) 48W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 42A (Ta) 48W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB6690S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB6690S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB6690S
MOSFET N-CH 30V 42A TO263AB

MOSFET N-CH 30V 42A TO263AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1037980-FDB6690S 278-FDB6690S FDB6690S-ND FDB6690S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6690S 30V 42A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 48000 milliwatts 48000 milliwatts
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