onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6021 FDB6021

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066910-FDB6021 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 1890pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 30 mOhm @ 14A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066910-FDB6021 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 1890pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 30 mOhm @ 14A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6021 - 066910-FDB6021 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6021
066910-FDB6021
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6021 066910-FDB6021
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066910-FDB6021 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 1890pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 30 mOhm @ 14A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066910-FDB6021
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 28A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 1890pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 14A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066910-FDB6021
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6021
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 37000 milliwatts
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