onsemi Single FETs, MOSFETs FDB5645

Description
N-Channel 60V 80A (Ta) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 60V 80A (Ta) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB5645-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB5645-ND
Single FETs, MOSFETs FDB5645-ND
N-Channel 60V 80A (Ta) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 80A (Ta) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
60V 80A MOSFET Transistor
278-FDB5645
60V 80A MOSFET Transistor 278-FDB5645
MOSFET N-CH 60V 80A D2PAK Product overview: FDB5645 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB5645 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 80A D2PAK Product overview: FDB5645 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB5645 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB5645 - 066909-FDB5645 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB5645
066909-FDB5645
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB5645 066909-FDB5645
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066909-FDB5645 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 107nC @ 10V Max Input Capacitance: 4468pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066909-FDB5645
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 4468pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB5645 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB5645
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB5645
MOSFET N-CH 60V 80A D2PAK

MOSFET N-CH 60V 80A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB5645-ND 278-FDB5645 066909-FDB5645 FDB5645
Product Name Single FETs, MOSFETs 60V 80A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB5645 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 125000 milliwatts 125000 milliwatts
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