MOSFETs Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 300V, 38A, 120mohm, D2PAK Product overview: FDB38N30U from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 300V, 38A, 120mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 38A, 120mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB38N30U can be used for catalog matching and distributor lookup.
N-Channel 300V 38A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 38A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 38A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
ON Semiconductor, FDB38N30U
MOSFET N CH 300V 38A D2PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037973-FDB38N30U
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 313W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 3340pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 120 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
MOSFET N CH 300V 38A D2PAK
MOSFET, N-CH, 38A, 300V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDB38N30U | FDB38N30UCT-ND | 1868142 | 1868142P | FDB38N30U | 1037973-FDB38N30U | FDB38N30U | FDB38N30U | 07AH3892 |
| Product Name | N-Channel 300V 38A 120mohm MOSFET Transistor | Single FETs, MOSFETs | Bipolar Transistors | Bipolar Transistors | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB38N30U | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 38A, 300V, To-263; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Transconductance | 0.0300 kS | ||||||||
| PD | 313 milliwatts | 313000 milliwatts | 313000 milliwatts | ||||||
| Package Type | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2pak | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | Surface Mount | TO-3; TO-263; TO-252 (DPAK) |
