onsemi Single FETs, MOSFETs FDB3672

N-Channel 100V 7.2A (Ta), 44A (Tc) 120W (Tc) Surface Mount D²PAK (TO-263)

N-CH MOSFET 100V 44A 24mR TO-263AB Surface Mount Product overview: FDB3672 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB3672 can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1173707-FDB3672
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 120W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 7.2A, 44A
Rds On (Maximum) at Id, Vgs: 28mOhm at 44A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 31nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1710pF at 25V