onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652 FDB3652

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001095-FDB3652 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2880pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V Alternative Parts (Cross-Reference): AOB412L; SUM60N10-17; FDB3652; FDB3652_Q; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652 - 001095-FDB3652 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDB3652 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDB3652CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB3652TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB3652DKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB3652 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 61A, To-263Ab; Channel Type Onsemi - 28H9662 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001095-FDB3652 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2880pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V Alternative Parts (Cross-Reference): AOB412L; SUM60N10-17; FDB3652; FDB3652_Q; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652 - 001095-FDB3652 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652
001095-FDB3652
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652 001095-FDB3652
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001095-FDB3652 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2880pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V Alternative Parts (Cross-Reference): AOB412L; SUM60N10-17; FDB3652; FDB3652_Q; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001095-FDB3652
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Alternative Parts (Cross-Reference): AOB412L; SUM60N10-17; FDB3652; FDB3652_Q;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB3652 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB3652
Single FETs, MOSFETs FDB3652
MOSFET N-CH 100V 9A/61A D2PAK

MOSFET N-CH 100V 9A/61A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB3652CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3652CT-ND
Single FETs, MOSFETs FDB3652CT-ND
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3652TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3652TR-ND
Single FETs, MOSFETs FDB3652TR-ND
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3652DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3652DKR-ND
Single FETs, MOSFETs FDB3652DKR-ND
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDB3652
MOSFET FDB3652
MOSFET N-Channel PowerTrench

MOSFET N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB3652 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB3652
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB3652
MOSFET N-CH 100V 9A/61A D2PAK

MOSFET N-CH 100V 9A/61A D2PAK

Supplier's Site
N Channel Mosfet, 100V, 61A, To-263Ab; Channel Type Onsemi - 28H9662 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 61A, To-263Ab; Channel Type Onsemi
28H9662
N Channel Mosfet, 100V, 61A, To-263Ab; Channel Type Onsemi 28H9662
N CHANNEL MOSFET, 100V, 61A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 61A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001095-FDB3652 FDB3652 FDB3652CT-ND FDB3652 FDB3652 28H9662
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3652 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 61A, To-263Ab; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 150000 milliwatts 150000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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