MOSFET N-CH 100V 12A/80A D2PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001094-FDB3632
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 800
MOSFET, POWER FIELD-EFFECT TRANSISTOR, 12A, 100V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 100V 12A/80A D2PAK
N CHANNEL MOSFET, 100V, 80A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:310W RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Radwell International | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6710334 | 6710334P | FDB3632 | 001094-FDB3632 | 16119698 | FDB3632DKR-ND | FDB3632 | 28H9661 | 67R2024 | FDB3632 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3632 | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 80A, To-263Ab; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Surface Mount | TO-3; TO-263 | TO-3 | ||
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
