onsemi Single FETs, MOSFETs FDB3632

Description
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB3632DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3632DKR-ND
Single FETs, MOSFETs FDB3632DKR-ND
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3632CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3632CT-ND
Single FETs, MOSFETs FDB3632CT-ND
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3632TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3632TR-ND
Single FETs, MOSFETs FDB3632TR-ND
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3632 - 001094-FDB3632 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3632
001094-FDB3632
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3632 001094-FDB3632
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001094-FDB3632 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Motor Drive & Control Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001094-FDB3632
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 800

Buy Now Datasheet
MOSFETs - 6710334 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710334
MOSFETs 6710334
MOSFET N-Channel 100V 12A D2PAK

MOSFET N-Channel 100V 12A D2PAK

Supplier's Site
MOSFETs - 6710334P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710334P
MOSFETs 6710334P
MOSFET N-Channel 100V 12A D2PAK

MOSFET N-Channel 100V 12A D2PAK

Supplier's Site
MOSFETs - 1241695 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1241695
MOSFETs 1241695
MOSFET N-Channel 100V 12A D2PAK

MOSFET N-Channel 100V 12A D2PAK

Supplier's Site
Single FETs, MOSFETs - FDB3632 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB3632
Single FETs, MOSFETs FDB3632
MOSFET N-CH 100V 12A/80A D2PAK

MOSFET N-CH 100V 12A/80A D2PAK

Supplier's Site Datasheet
Singapore
N-Channel MOSFET Transistor
2088-FDB3632
N-Channel MOSFET Transistor 2088-FDB3632
MOSFETs N-Channel PowerTrench Product overview: FDB3632 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB3632 can be used for catalog matching and distributor lookup.

MOSFETs N-Channel PowerTrench Product overview: FDB3632 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB3632 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDB3632
MOSFET FDB3632
MOSFET N-Channel PowerTrench

MOSFET N-Channel PowerTrench

Buy Now Datasheet
N Channel Mosfet, 100V, 80A, To-263Ab; Channel Type Onsemi - 28H9661 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 80A, To-263Ab; Channel Type Onsemi
28H9661
N Channel Mosfet, 100V, 80A, To-263Ab; Channel Type Onsemi 28H9661
N CHANNEL MOSFET, 100V, 80A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 80A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Channel Type Onsemi - 67R2024 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2024
Mosfet, Full Reel; Channel Type Onsemi 67R2024
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:310W RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:310W RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 16119698 - Radwell International
Willingboro, NJ, United States
Transistor
16119698
Transistor 16119698
MOSFET, POWER FIELD-EFFECT TRANSISTOR, 12A, 100V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

MOSFET, POWER FIELD-EFFECT TRANSISTOR, 12A, 100V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB3632 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB3632
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB3632
MOSFET N-CH 100V 12A/80A D2PAK

MOSFET N-CH 100V 12A/80A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number FDB3632DKR-ND 001094-FDB3632 6710334 6710334P FDB3632 2088-FDB3632 FDB3632 28H9661 67R2024 16119698 FDB3632
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3632 MOSFETs MOSFETs Single FETs, MOSFETs N-Channel MOSFET Transistor MOSFET N Channel Mosfet, 100V, 80A, To-263Ab; Channel Type Onsemi Mosfet, Full Reel; Channel Type Onsemi Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; D2pak (to-263) TO-263; TO-263 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Reel TO-3; TO-263 TO-3 Surface Mount
V(BR)DSS 100 volts 100 volts
PD 310000 milliwatts 310000 milliwatts 310 milliwatts 310000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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