onsemi Single FETs, MOSFETs FDB3502

Description
MOSFET N-CH 75V 6A/14A TO263AB
Request a Quote Datasheet
Description
MOSFET N-CH 75V 6A/14A TO263AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB3502 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB3502
Single FETs, MOSFETs FDB3502
MOSFET N-CH 75V 6A/14A TO263AB

MOSFET N-CH 75V 6A/14A TO263AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3502 - 001093-FDB3502 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3502
001093-FDB3502
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3502 001093-FDB3502
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001093-FDB3502 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 6A (Ta), 14A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 815pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 47 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001093-FDB3502
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 6A (Ta), 14A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 815pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 47 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB3502TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3502TR-ND
Single FETs, MOSFETs FDB3502TR-ND
N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3502CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3502CT-ND
Single FETs, MOSFETs FDB3502CT-ND
N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB3502DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB3502DKR-ND
Single FETs, MOSFETs FDB3502DKR-ND
N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB3502 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB3502
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB3502
MOSFET N-CH 75V 6A/14A TO263AB

MOSFET N-CH 75V 6A/14A TO263AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDB3502
MOSFET FDB3502
MOSFET 75V N-Channel PowerTrench

MOSFET 75V N-Channel PowerTrench

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDB3502 001093-FDB3502 FDB3502TR-ND FDB3502 FDB3502
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB3502 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts 75 volts
IDSS 6000 milliamps
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