onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB28N30TM FDB28N30TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001092-FDB28N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Family Name: FDB28N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 129 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXTA36N30P; IXTA36N30P-TRL; AUIRFS6535TRR; AUIRFS6535TRL; Introduction Date: April 23, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001092-FDB28N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Family Name: FDB28N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 129 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXTA36N30P; IXTA36N30P-TRL; AUIRFS6535TRR; AUIRFS6535TRL; Introduction Date: April 23, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB28N30TM - 001092-FDB28N30TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB28N30TM
001092-FDB28N30TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB28N30TM 001092-FDB28N30TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001092-FDB28N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Family Name: FDB28N30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 129 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXTA36N30P; IXTA36N30P-TRL; AUIRFS6535TRR; AUIRFS6535TRL; Introduction Date: April 23, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001092-FDB28N30TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Family Name: FDB28N30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 129 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IXTA36N30P; IXTA36N30P-TRL; AUIRFS6535TRR; AUIRFS6535TRL;
Introduction Date: April 23, 2007
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB28N30TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB28N30TM
Single FETs, MOSFETs FDB28N30TM
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB28N30TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB28N30TM
Single FETs, MOSFETs FDB28N30TM
MOSFET N-CH 300V 28A D2PAK

MOSFET N-CH 300V 28A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB28N30TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB28N30TMCT-ND
Single FETs, MOSFETs FDB28N30TMCT-ND
N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB28N30TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB28N30TMTR-ND
Single FETs, MOSFETs FDB28N30TMTR-ND
N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB28N30TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB28N30TMDKR-ND
Single FETs, MOSFETs FDB28N30TMDKR-ND
N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
MOSFETs - 7598970 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7598970
MOSFETs 7598970
MOSFET N-Channel 300V 28A UniFET D2PAK

MOSFET N-Channel 300V 28A UniFET D2PAK

Supplier's Site
MOSFETs - 7598970P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7598970P
MOSFETs 7598970P
MOSFET N-Channel 300V 28A UniFET D2PAK

MOSFET N-Channel 300V 28A UniFET D2PAK

Supplier's Site
MOSFETs - 1241330 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1241330
MOSFETs 1241330
MOSFET N-Channel 300V 28A UniFET D2PAK

MOSFET N-Channel 300V 28A UniFET D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB28N30TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB28N30TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB28N30TM
MOSFET N-CH 300V 28A D2PAK

MOSFET N-CH 300V 28A D2PAK

Supplier's Site
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R - 598-FDB28N30TM - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R
598-FDB28N30TM
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R 598-FDB28N30TM
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R

Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 300V N-Channel

MOSFET 300V N-Channel

Buy Now Datasheet
N Channel Mosfet, 300V, 28A, D2-Pak, Full Reel; Channel Type Onsemi - 78M0907 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 300V, 28A, D2-Pak, Full Reel; Channel Type Onsemi
78M0907
N Channel Mosfet, 300V, 28A, D2-Pak, Full Reel; Channel Type Onsemi 78M0907
N CHANNEL MOSFET, 300V, 28A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5VRoHS Compliant: Yes

N CHANNEL MOSFET, 300V, 28A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5VRoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 28 A, 300 V, 108 Mohm, 10 V, 5 V Rohs Compliant Onsemi - 31Y1337 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 28 A, 300 V, 108 Mohm, 10 V, 5 V Rohs Compliant Onsemi
31Y1337
Mosfet Transistor, N Channel, 28 A, 300 V, 108 Mohm, 10 V, 5 V Rohs Compliant Onsemi 31Y1337
MOSFET Transistor, N Channel, 28 A, 300 V, 108 mohm, 10 V, 5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 28 A, 300 V, 108 mohm, 10 V, 5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001092-FDB28N30TM FDB28N30TM FDB28N30TMCT-ND 7598970 7598970P FDB28N30TM 598-FDB28N30TM FDB28N30TM 78M0907 31Y1337
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB28N30TM Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R MOSFET N Channel Mosfet, 300V, 28A, D2-Pak, Full Reel; Channel Type Onsemi Mosfet Transistor, N Channel, 28 A, 300 V, 108 Mohm, 10 V, 5 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 300 volts 300 volts 300 volts
PD 250000 milliwatts 250000 milliwatts 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; D2pak (to-263) TO-263; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-3
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