onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB24AN06LA0 FDB24AN06LA0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128866-FDB24AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.8A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128866-FDB24AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.8A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB24AN06LA0 - 128866-FDB24AN06LA0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB24AN06LA0
128866-FDB24AN06LA0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB24AN06LA0 128866-FDB24AN06LA0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128866-FDB24AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.8A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 128866-FDB24AN06LA0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.8A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 5V
Max Input Capacitance: 1850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FDB24AN06LA0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB24AN06LA0-ND
Single FETs, MOSFETs FDB24AN06LA0-ND
N-Channel 60V 7.8A (Ta), 40A (Tc) 75W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 7.8A (Ta), 40A (Tc) 75W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
60V 40A MOSFET Transistor
278-FDB24AN06LA0
60V 40A MOSFET Transistor 278-FDB24AN06LA0
MOSFET N-CH 60V 40A TO-263AB Product overview: FDB24AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB24AN06LA0 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 40A TO-263AB Product overview: FDB24AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB24AN06LA0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB24AN06LA0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB24AN06LA0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB24AN06LA0
MOSFET N-CH 60V 7.8A/40A TO263AB

MOSFET N-CH 60V 7.8A/40A TO263AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 128866-FDB24AN06LA0 FDB24AN06LA0-ND 278-FDB24AN06LA0 FDB24AN06LA0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB24AN06LA0 Single FETs, MOSFETs 60V 40A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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