onsemi Single FETs, MOSFETs FDB20AN06A0

Description
N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - FDB20AN06A0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB20AN06A0-ND
Single FETs, MOSFETs FDB20AN06A0-ND
N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB20AN06A0 - 204088-FDB20AN06A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB20AN06A0
204088-FDB20AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB20AN06A0 204088-FDB20AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204088-FDB20AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9A (Ta), 45A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204088-FDB20AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9A (Ta), 45A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB20AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB20AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB20AN06A0
MOSFET N-CH 60V 9A/45A TO263AB

MOSFET N-CH 60V 9A/45A TO263AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB20AN06A0-ND 204088-FDB20AN06A0 FDB20AN06A0
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB20AN06A0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
V(BR)DSS 60 volts
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