onsemi Single FETs, MOSFETs FDB1D7N10CL7

Description
N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D2PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D2PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 488-FDB1D7N10CL7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDB1D7N10CL7TR-ND
Single FETs, MOSFETs 488-FDB1D7N10CL7TR-ND
N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D2PAK (TO-263)

N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D2PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 488-FDB1D7N10CL7CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDB1D7N10CL7CT-ND
Single FETs, MOSFETs 488-FDB1D7N10CL7CT-ND
MOSFET N-CH 100V 268A D2PAK

MOSFET N-CH 100V 268A D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 488-FDB1D7N10CL7DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDB1D7N10CL7DKR-ND
Single FETs, MOSFETs 488-FDB1D7N10CL7DKR-ND
MOSFET N-CH 100V 268A D2PAK

MOSFET N-CH 100V 268A D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1355333-FDB1D7N10CL7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1355333-FDB1D7N10CL7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1355333-FDB1D7N10CL7
Win Source Part Number: 1355333-FDB1D7N10CL7 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Series: PowerTrench® Package: Tape & Reel Product Status: Active Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: D²PAK (TO-263) Base Product Number: FDB1D7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 268A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 15V Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V Power Dissipation (Max): 250W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1355333-FDB1D7N10CL7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: PowerTrench®
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D²PAK (TO-263)
Base Product Number: FDB1D7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 268A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 15V
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Singapore
N-Channel 100 V 268 A 100V MOSFET Transistor
278-FDB1D7N10CL7
N-Channel 100 V 268 A 100V MOSFET Transistor 278-FDB1D7N10CL7
Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ 100V PTNG NMOS, 800-REEL Product overview: FDB1D7N10CL7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 268 A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 268 A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB1D7N10CL7 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ 100V PTNG NMOS, 800-REEL Product overview: FDB1D7N10CL7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 268 A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 268 A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB1D7N10CL7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB1D7N10CL7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB1D7N10CL7
Single FETs, MOSFETs FDB1D7N10CL7
MOSFET N-CH 100V 268A D2PAK

MOSFET N-CH 100V 268A D2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET 100V 268A 1.7 mOhm

MOSFET MOSFET 100V 268A 1.7 mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB1D7N10CL7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB1D7N10CL7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB1D7N10CL7
MOSFET N-CH 100V 268A D2PAK

MOSFET N-CH 100V 268A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 488-FDB1D7N10CL7TR-ND 1355333-FDB1D7N10CL7 278-FDB1D7N10CL7 FDB1D7N10CL7 FDB1D7N10CL7 FDB1D7N10CL7
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs N-Channel 100 V 268 A 100V MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-7, D2PAK (6 Leads + Tab) TO-263; SOT3 TO-263; TO-263-7, D²Pak (6 Leads + Tab) TO-263; TO-263-7, D2PAK (6 Leads + Tab)
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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