onsemi Single FETs, MOSFETs FDB1D7N10CL7

MOSFET N-CH 100V 268A D2PAK

Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ 100V PTNG NMOS, 800-REEL Product overview: FDB1D7N10CL7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 268 A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 268 A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB1D7N10CL7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1355333-FDB1D7N10CL7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: PowerTrench®
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D²PAK (TO-263)
Base Product Number: FDB1D7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 268A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 15V
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D2PAK (TO-263)

MOSFET N-CH 100V 268A D2PAK

MOSFET N-CH 100V 268A D2PAK