onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB16AN08A0 FDB16AN08A0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066906-FDB16AN08A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1857pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066906-FDB16AN08A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1857pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 800
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB16AN08A0 - 066906-FDB16AN08A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB16AN08A0
066906-FDB16AN08A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB16AN08A0 066906-FDB16AN08A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066906-FDB16AN08A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1857pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066906-FDB16AN08A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1857pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB16AN08A0 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB16AN08A0
Single FETs, MOSFETs FDB16AN08A0
MOSFET N-CH 75V 9A/58A D2PAK

MOSFET N-CH 75V 9A/58A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB16AN08A0 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB16AN08A0
Single FETs, MOSFETs FDB16AN08A0
MOSFET N-CH 75V 9A/58A D2PAK

MOSFET N-CH 75V 9A/58A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB16AN08A0TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB16AN08A0TR-ND
Single FETs, MOSFETs FDB16AN08A0TR-ND
N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB16AN08A0DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB16AN08A0DKR-ND
Single FETs, MOSFETs FDB16AN08A0DKR-ND
N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB16AN08A0CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB16AN08A0CT-ND
Single FETs, MOSFETs FDB16AN08A0CT-ND
N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Discrete Auto N-Ch UltraFET Trench

MOSFET Discrete Auto N-Ch UltraFET Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB16AN08A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB16AN08A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB16AN08A0
MOSFET N-CH 75V 9A/58A D2PAK

MOSFET N-CH 75V 9A/58A D2PAK

Supplier's Site
Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R - 598-FDB16AN08A0 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R
598-FDB16AN08A0
Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R 598-FDB16AN08A0
Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R

Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066906-FDB16AN08A0 FDB16AN08A0 FDB16AN08A0TR-ND FDB16AN08A0 FDB16AN08A0 598-FDB16AN08A0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB16AN08A0 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) D2PAK T/R
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 75 volts 75 volts 75 volts
PD 135000 milliwatts 135000 milliwatts 135000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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