onsemi Single FETs, MOSFETs FDB16AN08A0

MOSFET N-CH 75V 9A/58A D2PAK

MOSFET N-CH 75V 9A/58A D2PAK

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

MOSFET N-CH 75V 9A/58A D2PAK Product overview: FDB16AN08A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 9A, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 9A, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB16AN08A0 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066906-FDB16AN08A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1857pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 800