MOSFETs N-Channel PowerTrench Product overview: FDB13AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB13AN06A0 can be used for catalog matching and distributor lookup.
N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001084-FDB13AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.9A (Ta), 62A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 62A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 60V 10.9A/62A D2PAK
N CHANNEL MOSFET, 60V, 62A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:62A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDB13AN06A0 | FDB13AN06A0CT-ND | 001084-FDB13AN06A0 | FDB13AN06A0 | FDB13AN06A0 | 50H4190 |
| Product Name | N-Channel MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB13AN06A0 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 62A To-263Ab; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 115 milliwatts | 115000 milliwatts | ||||
| Package Type | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
