onsemi Single FETs, MOSFETs FDB12N50TM

Description
MOSFET N-CH 500V 11.5A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 500V 11.5A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB12N50TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB12N50TM
Single FETs, MOSFETs FDB12N50TM
MOSFET N-CH 500V 11.5A D2PAK

MOSFET N-CH 500V 11.5A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM - 1021364-FDB12N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM
1021364-FDB12N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM 1021364-FDB12N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1021364-FDB12N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 165W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1315pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1021364-FDB12N50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1315pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMDKR-ND
Single FETs, MOSFETs FDB12N50TMDKR-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMTR-ND
Single FETs, MOSFETs FDB12N50TMTR-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMCT-ND
Single FETs, MOSFETs FDB12N50TMCT-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V N-CH MOSFET

MOSFET 500V N-CH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB12N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB12N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB12N50TM
MOSFET N-CH 500V 11.5A D2PAK

MOSFET N-CH 500V 11.5A D2PAK

Supplier's Site
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi - 52M3141 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi
52M3141
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi 52M3141
N CH MOSFET, 500V, 11.5A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CH MOSFET, 500V, 11.5A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDB12N50TM 1021364-FDB12N50TM FDB12N50TMDKR-ND FDB12N50TM FDB12N50TM 52M3141
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 11500 milliamps 11500 milliamps
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