onsemi Single FETs, MOSFETs FDB12N50TM

Description
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB12N50TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMDKR-ND
Single FETs, MOSFETs FDB12N50TMDKR-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMTR-ND
Single FETs, MOSFETs FDB12N50TMTR-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB12N50TMCT-ND
Single FETs, MOSFETs FDB12N50TMCT-ND
N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB12N50TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB12N50TM
Single FETs, MOSFETs FDB12N50TM
MOSFET N-CH 500V 11.5A D2PAK

MOSFET N-CH 500V 11.5A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM - 1021364-FDB12N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM
1021364-FDB12N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM 1021364-FDB12N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1021364-FDB12N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 165W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1315pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1021364-FDB12N50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1315pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi - 52M3141 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi
52M3141
N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi 52M3141
N CH MOSFET, 500V, 11.5A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CH MOSFET, 500V, 11.5A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V N-CH MOSFET

MOSFET 500V N-CH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB12N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB12N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB12N50TM
MOSFET N-CH 500V 11.5A D2PAK

MOSFET N-CH 500V 11.5A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB12N50TMDKR-ND FDB12N50TM 1021364-FDB12N50TM 52M3141 FDB12N50TM FDB12N50TM
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB12N50TM N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
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