onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB120N10 FDB120N10

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001083-FDB120N10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 74A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 5605pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 74A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 800

N-Channel 100V 74A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 74A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)

MOSFETs 100V N-Chan 12Mohm PowerTrench Product overview: FDB120N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB120N10 can be used for catalog matching and distributor lookup.