Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037958-FDB088N08
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 118nC @ 10V
Max Input Capacitance: 6595pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET N-CH 75V 120A D2PAK
MOSFETs NCH 75V 8.8Mohm Product overview: FDB088N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 8.8Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 8.8Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB088N08 can be used for catalog matching and distributor lookup.
N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 75V 120A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1037958-FDB088N08 | FDB088N08 | 2088-FDB088N08 | FDB088N08CT-ND | FDB088N08 | FDB088N08 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08 | Single FETs, MOSFETs | 75V 8.8Mohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 75 volts | 75 volts | ||||
| PD | 160000 milliwatts | 160000 milliwatts | 160 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
