onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08 FDB088N08

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037958-FDB088N08 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 118nC @ 10V Max Input Capacitance: 6595pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.8 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037958-FDB088N08 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 118nC @ 10V Max Input Capacitance: 6595pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.8 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08 - 1037958-FDB088N08 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08
1037958-FDB088N08
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08 1037958-FDB088N08
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037958-FDB088N08 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 118nC @ 10V Max Input Capacitance: 6595pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.8 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037958-FDB088N08
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 118nC @ 10V
Max Input Capacitance: 6595pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Singapore
75V 8.8Mohm MOSFET Transistor
2088-FDB088N08
75V 8.8Mohm MOSFET Transistor 2088-FDB088N08
MOSFETs NCH 75V 8.8Mohm Product overview: FDB088N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 8.8Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 8.8Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB088N08 can be used for catalog matching and distributor lookup.

MOSFETs NCH 75V 8.8Mohm Product overview: FDB088N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 8.8Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 8.8Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB088N08 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDB088N08CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB088N08CT-ND
Single FETs, MOSFETs FDB088N08CT-ND
N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB088N08TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB088N08TR-ND
Single FETs, MOSFETs FDB088N08TR-ND
N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB088N08 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB088N08
Single FETs, MOSFETs FDB088N08
MOSFET N-CH 75V 120A D2PAK

MOSFET N-CH 75V 120A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB088N08 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB088N08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB088N08
MOSFET N-CH 75V 120A D2PAK

MOSFET N-CH 75V 120A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH 75V 8.8Mohm

MOSFET NCH 75V 8.8Mohm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037958-FDB088N08 2088-FDB088N08 FDB088N08CT-ND FDB088N08 FDB088N08 FDB088N08
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB088N08 75V 8.8Mohm MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 75 volts 75 volts
PD 160000 milliwatts 160 milliwatts 160000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) Reel TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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