N-Channel 150V 117A (Tc) 294W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 117A (Tc) 294W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 117A (Tc) 294W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs 150V N-CHANNEL POWERTRENCH MOSFET Product overview: FDB082N15A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB082N15A can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 117A D2PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001082-FDB082N15A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 294W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 117A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 6040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET 150V N-CHANNEL POWERTRENCH MOSFET
MOSFET N-CH 150V 117A D2PAK
N CHANNEL MOSFET, POWERTRENCH, 150V, 105A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:105A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:231WRoHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB082N15AFSCT-ND | 2088-FDB082N15A | FDB082N15A | 001082-FDB082N15A | FDB082N15A | FDB082N15A | 54T8311 |
| Product Name | Single FETs, MOSFETs | N-Channel 150V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB082N15A | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, Powertrench, 150V, 105A, D2Pak, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Reel | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | 10V | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.1390 kS | ||||||
| PD | 231 milliwatts | 294000 milliwatts | 294000 milliwatts | 231000 milliwatts |
