N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs N-Channel PT 6V 8A 7mOhm Product overview: FDB070AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 6V, 8A, 7mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6V, 8A, 7mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB070AN06A0 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001079-FDB070AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET N-CH 60V 15A/80A D2PAK
MOSFET N-Channel PT 6V 8A 7mOhm
N CHANNEL MOSFET, 60V, 80A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB070AN06A0TR-ND | 2088-FDB070AN06A0 | 001079-FDB070AN06A0 | FDB070AN06A0 | FDB070AN06A0 | 60J0576 |
| Product Name | Single FETs, MOSFETs | N-Channel 6V 8A 7mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Reel | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | |
| MOSFET Operating Mode | Enhancement | |||||
| PD | 175 milliwatts | 175000 milliwatts |
