onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 FDB070AN06A0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001079-FDB070AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 - 001079-FDB070AN06A0 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDB070AN06A0TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB070AN06A0CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDB070AN06A0DKR-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi - 60J0576 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB070AN06A0 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001079-FDB070AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 - 001079-FDB070AN06A0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0
001079-FDB070AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 001079-FDB070AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001079-FDB070AN06A0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001079-FDB070AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB070AN06A0TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB070AN06A0TR-ND
Single FETs, MOSFETs FDB070AN06A0TR-ND
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB070AN06A0CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB070AN06A0CT-ND
Single FETs, MOSFETs FDB070AN06A0CT-ND
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB070AN06A0DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB070AN06A0DKR-ND
Single FETs, MOSFETs FDB070AN06A0DKR-ND
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi - 60J0576 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi
60J0576
N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi 60J0576
N CHANNEL MOSFET, 60V, 80A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 80A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB070AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB070AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB070AN06A0
MOSFET N-CH 60V 15A/80A D2PAK

MOSFET N-CH 60V 15A/80A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDB070AN06A0
MOSFET FDB070AN06A0
MOSFET N-Channel PT 6V 8A 7mOhm

MOSFET N-Channel PT 6V 8A 7mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001079-FDB070AN06A0 FDB070AN06A0TR-ND 60J0576 FDB070AN06A0 FDB070AN06A0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB070AN06A0 Single FETs, MOSFETs N Channel Mosfet, 60V, 80A To-263Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 175000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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