Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001077-FDB050AN06A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 245W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs 60V N-Ch PowerTrench MOSFET Product overview: FDB050AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB050AN06A0 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 18A/80A D2PAK
MOSFET N-CH 60V 18A/80A D2PAK
MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001077-FDB050AN06A0 | FDB050AN06A0DKR-ND | 8090809P | 8090809 | 2088-FDB050AN06A0 | FDB050AN06A0 | FDB050AN06A0 | 07AH3890 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB050AN06A0 | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80A, 60V, To-263; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 245000 milliwatts | 245 milliwatts | 245000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; D2pak (to-263) | Reel | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount | TO-3; TO-263; TO-252 (DPAK) |
