Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001075-FDB045AN08A0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 19A (Ta), 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 138nC @ 10V
Max Input Capacitance: 6600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking
Quantity per package: 800
MOSFET N-CH 75V 19A/90A D2PAK
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFETs N-Channel UltraFET Product overview: FDB045AN08A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB045AN08A0 can be used for catalog matching and distributor lookup.
N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 75V 19A/90A D2PAK
N CHANNEL MOSFET, 75V, 80A TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 75V 90A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001075-FDB045AN08A0 | FDB045AN08A0 | 2088-FDB045AN08A0 | FDB045AN08A0TR-ND | FDB045AN08A0 | 28H9655 | 598-FDB045AN08A0 | FDB045AN08A0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB045AN08A0 | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 75V, 80A To-263Ab; Channel Type Onsemi | MOSFET N-CH 75V 90A D2PAK | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | |||||
| PD | 310000 milliwatts | 310000 milliwatts | 310 milliwatts | 310000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
