MOSFET N-CH 100V 120A D2PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066905-FDB035N10A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 333W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 7295pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control, Communications & Networking
Quantity per package: 800
N-Channel 100V 120A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 120A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 120A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263)
N CHANNEL MOSFET, POWERTRENCH, 100V, 120A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:333WRoHS
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET N-CH 100V 120A D2PAK
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 8023200P | 8023200 | FDB035N10A | 066905-FDB035N10A | FDB035N10ACT-ND | 54T8309 | 07AH3889 | FDB035N10A | FDB035N10A |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB035N10A | Single FETs, MOSFETs | N Channel Mosfet, Powertrench, 100V, 120A, D2Pak, Full Reel; Channel Type Onsemi | Mosfet, N-Ch, 214A, 100V, To-263; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-263; TO-263 | TO-263; D2pak (to-263) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
