Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001074-FDB031N08
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Family Name: FDB031N08
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 15160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IRFS3107TRLPBF; IRFS3107PbF; IPB031NE7N3 G;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFETs 75V N-Channel PowerTrench Product overview: FDB031N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB031N08 can be used for catalog matching and distributor lookup.
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 75V 120A D2PAK
MOSFET 75V N-Channel PowerTrench
MOSFET N-CH 75V 120A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 001074-FDB031N08 | 2088-FDB031N08 | FDB031N08DKR-ND | 07AH3888 | FDB031N08 | FDB031N08 | FDB031N08 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB031N08 | N-Channel 75V MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 235A, 75V, To-263; Transistor Polarity Onsemi | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 75 volts | 75 volts | |||||
| PD | 375000 milliwatts | 375 milliwatts | 375000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
