MOSFET N-CH 75V 120A D2PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001074-FDB031N08
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Family Name: FDB031N08
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 15160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IRFS3107TRLPBF; IRFS3107PbF; IPB031NE7N3 G;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 75V 120A D2PAK
MOSFET 75V N-Channel PowerTrench
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB031N08 | 001074-FDB031N08 | FDB031N08DKR-ND | FDB031N08 | FDB031N08 | 07AH3888 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB031N08 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 235A, 75V, To-263; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 75 volts | 75 volts | ||||
| IDSS | 120000 milliamps | 235000 milliamps | ||||
| PD | 375000 milliwatts | 375000 milliwatts |
